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| SI1037X New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.195 @ VGS = -4.5 V -20 0.260 @ VGS = -2.5 V 0.350 @ VGS = -1.8 V ID (A) -0.84 -0.73 -0.64 D D D D TrenchFETr Power MOSFET Low Threshold Smallest LITTLE FOOTr Package: 1.6 mm x 1.6 mm Low 0.6-mm Profile APPLICATIONS D Cell Phones and Pagers - Load Switch D Battery Operated Systems SC-89 (6-LEADS) D 1 6 D Marking Code N WL Lot Traceability and Date Code Pin 1 Identifier Part Number Code D 2 5 D G 3 4 S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS -0.18 0.21 0.13 -55 to 150 -0.68 -4 -0.14 0.17 0.10 W _C -0.62 A Symbol VDS VGS 5 secs Steady State -20 "8 Unit V -0.84 -0.77 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t v 5 sec Steady State RthJA Symbol Typical 500 600 Maximum 600 720 Unit _C/W _ Notes a. Surface Mounted on 1" x 1" FR4 Board with minimum copper. Document Number: 70686 S-04766--Rev. A, 08-Oct-01 www.vishay.com 1 SI1037X Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -0.77 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -0.67 A VGS = -1.8 V, ID = -0.2 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -10 V, ID = -0.77 A IS = -0.14 A, VGS = 0 V -4 0.160 0.212 0.290 3.1 -0.78 -1.2 0.195 0.260 0.350 S V W -0.45 "100 -1 -5 V nA mA m A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -0.14 A, di/dt = 100 A/ms VDD = -10 V, RL = 20 W ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W VDS = -10 V, VGS = -4.5 V, ID = -0.77 A 3.5 0.65 0.60 10 15 30 10 20 20 30 60 20 40 ns 5.5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 4.0 VGS = 5 thru 2.5 V 3.2 2V I D - Drain Current (A) I D - Drain Current (A) 2.4 2.4 3.2 4.0 Transfer Characteristics TC = -55_C 25_C 125_C 1.6 1.5 V 0.8 1V 0.0 0.0 0.8 1.6 2.4 3.2 4.0 1.6 0.8 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 70686 S-04766--Rev. A, 08-Oct-01 www.vishay.com 2 SI1037X New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.6 r DS(on) - On-Resistance ( W ) 600 Vishay Siliconix Capacitance 0.5 C - Capacitance (pF) 500 Ciss 400 0.4 VGS = 1.8 V 0.3 VGS = 2.5 V VGS = 4.5 V 300 0.2 200 Coss 0.1 100 Crss 0 4 8 12 16 20 0.0 0 1 2 ID - Drain Current (A) 3 4 0 VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.77 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 0.77 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 2 3 4 1.2 2 1.0 1 0.8 0 0 1 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 4 0.5 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 1 r DS(on) - On-Resistance ( W ) 0.4 ID = 0.77 A 0.3 ID = 0.2 A 0.2 I S - Source Current (A) TJ = 25_C 0.1 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 70686 S-04766--Rev. A, 08-Oct-01 www.vishay.com 3 SI1037X Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.35 4 Single Pulse Power, Junction-to-Ambient 0.25 V GS(th) Variance (V) ID = 250 mA 0.15 Power (W) 3 2 0.05 1 -0.05 -0.15 -50 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 600_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 70686 S-04766--Rev. A, 08-Oct-01 |
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